The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

May. 26, 2015
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

David Cheung, Foster City, CA (US);

Haoquan Fang, Sunnyvale, CA (US);

Jack Kuo, Pleasanton, CA (US);

Ilia Kalinovski, Berkeley, CA (US);

Zhao Li, Blacksburg, VA (US);

Guhua Yao, Folsom, CA (US);

Anirban Guha, Milpitas, CA (US);

Kirk J. Ostrowski, San Jose, CA (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); G03F 7/427 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01);
Abstract

Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.


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