The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Oct. 07, 2015
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Katsutoshi Suito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/24 (2006.01); G11C 16/14 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/3445 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01);
Abstract

The disclosure provides a NAND flash memory and a reading method thereof, which may read a negative threshold value of a memory cell without using a negative-voltage-generating circuit. The disclosed NAND flash memory includes a sense amplifier, a bit line selecting circuit and an array having a plurality of NAND string units. The disclosed NAND flash memory includes a ΔV supplying portion element that applies a positive voltage to a source line, a P well formed with a selected memory cell, and a non-selected bit line which is adjacent to a selected bit line, within a predetermined time period, after the selected bit line is pre-charged and during a reading process.


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