The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Jul. 08, 2016
Read retry operations with read reference voltages ranked for different page populations of a memory
Seagate Technology Llc, Cupertino, CA (US);
AbdelHakim S. Alhussien, San Jose, CA (US);
Sundararajan Sankaranarayanan, Fremont, CA (US);
Thuy Van Nguyen, Hanoi, VN;
Ludovic Danjean, San Jose, CA (US);
Erich F. Haratsch, San Jose, CA (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
Methods and apparatus are provided for read retry operations with read reference voltages ranked for different page populations of a memory. One method comprises obtaining a plurality of rankings of a plurality of read reference voltages for a plurality of page populations, wherein the rankings are based on a predefined performance metric; and reading a codeword from the memory a plurality of times, wherein each of the read operations uses a different one of the plurality of read reference voltages selected based on the rankings of the plurality of read reference voltages. The performance metric comprises, for example, a bit error rate, a bit polarity disparity, a substantially minimal syndrome weight and/or measures of an average system latency or a tail latency. The ranking is optionally based on a size of the page populations that had each of the ranked read reference voltages. Channel estimation is performed separately for each of the plurality of page populations.