The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 07, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Zhiyuan Cheng, Lincoln, MA (US);
Calvin Sheen, Derry, NH (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H03M 1/12 (2006.01); B82Y 10/00 (2011.01); G11C 11/16 (2006.01); H01L 27/11 (2006.01); H01L 27/24 (2006.01); H01L 29/737 (2006.01); H01L 29/88 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/12 (2006.01); H01L 29/267 (2006.01); G06F 1/04 (2006.01); H01L 27/06 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H03K 5/24 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H03M 1/12 (2013.01); B82Y 10/00 (2013.01); G06F 1/04 (2013.01); G11C 11/16 (2013.01); H01L 27/0629 (2013.01); H01L 27/0641 (2013.01); H01L 27/11 (2013.01); H01L 27/24 (2013.01); H01L 29/04 (2013.01); H01L 29/0895 (2013.01); H01L 29/122 (2013.01); H01L 29/267 (2013.01); H01L 29/36 (2013.01); H01L 29/7376 (2013.01); H01L 29/7378 (2013.01); H01L 29/7786 (2013.01); H01L 29/882 (2013.01); H03K 5/2427 (2013.01); H01L 21/0237 (2013.01); H01L 21/0256 (2013.01); H01L 21/02521 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02568 (2013.01); H01L 21/02636 (2013.01); Y10S 438/979 (2013.01);
Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.