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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559698 B1

PDFFull Text
Expired
Date of Patent:
Jan. 31, 2017

Filed:

Sep. 30, 2013

Spintronic logic element

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Dmitri E. Nikonov, Beaverton, OR (US);

Sasikanth Manipatruni, Hillsboro, OR (US);

Michael Kishinevsky, Hillsboro, OR (US);

Ian A. Young, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Trop, Pruner & Hu, P.C.

Primary Examiner:

Vibol Tan

Int. Cl.
CPC ...
H03K 19/16 (2006.01); H01L 29/66 (2006.01); G11C 11/16 (2006.01); H03K 19/18 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H03K 19/16 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 29/66984 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H03K 19/18 (2013.01);
Abstract

An embodiment includes a C-element logic gate implemented as a spin logic device that provides a compact and low-power implementation of asynchronous logic by implementing a C-element with spintronic technology. An embodiment includes a first nanopillar including a first contact and a first fixed magnetic layer; a second nanopillar including a second contact and a second fixed magnetic layer; and a third nanopillar including a third contact, a tunnel barrier, and a third fixed magnetic layer; wherein (a) the first, second, and third nanopillars are all formed over a free magnetic layer, and (b) the third fixed magnetic layer, the tunnel barrier, and the free magnetic layer form a magnetic tunnel junction (MTJ). Other embodiments are described herein.

Find Patent Forward Citations

Nikonov, Dmitri. (2017). Spintronic logic element (U.S. Patent No. 9559698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9559698

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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