The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 22, 2013
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Edward E. Miller, Beaverton, OR (US);
LATTICE SEMICONDUCTOR CORPORATION, Portland, OR (US);
Abstract
In one embodiment, the operating range of an over-current detection circuit is extended to higher input voltage levels by providing a reference-voltage generation circuit for the detection circuit with voltage protection circuitry that applies an additional voltage drop to shield other vulnerable transistor devices from the higher input voltages. In addition, bypass circuitry is provided that is inactive at the highest input voltage levels, but actively bypasses at least some of the voltage protection circuitry at relatively low input voltage levels to apply a voltage drop that is sufficient to ensure proper operation of the vulnerable transistor devices at the low voltage levels. In one implementation, the vulnerable transistor devices are NFET devices in a programmable current mirror of the reference-voltage generation circuit. In addition, a stiffened voltage divider helps to ensure sufficient voltage drop at the low voltage levels. The protection and bypass circuitry also enable hot-socketing operations.