The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Mar. 15, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brian A. Bryce, Chevy Chase, MD (US);

Josephine B. Chang, Bedford Hills, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/332 (2013.01); H01L 41/29 (2013.01); H01L 41/047 (2006.01); H01L 29/84 (2006.01); H01L 27/20 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 41/332 (2013.01); H01L 21/32136 (2013.01); H01L 27/20 (2013.01); H01L 29/84 (2013.01); H01L 41/0471 (2013.01); H01L 41/0477 (2013.01); H01L 41/29 (2013.01);
Abstract

A semiconductor device includes a piezoelectric layer interposed between a first metal layer and a hardmask layer. A first trench extends through the hardmask layer, the piezoelectric layer and the first metal layer. A self-limiting second trench extends through the hardmask layer and the piezoelectric layer without reaching the first metal layer.


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