The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jun. 19, 2014
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Benoit Amstatt, Grenoble, FR;
Bruno-Jules Daudin, La Tronche, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02513 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/16 (2013.01); H01L 33/24 (2013.01);
Abstract
A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium.