The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
May. 06, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
Takashi Inoue, Kawasaki, JP;
Tatsuo Nakayama, Kawasaki, JP;
Yasuhiro Okamoto, Kawasaki, JP;
Hiroshi Kawaguchi, Kawasaki, JP;
Toshiyuki Takewaki, Kawasaki, JP;
Nobuhiro Nagura, Kawasaki, JP;
Takayuki Nagai, Kawasaki, JP;
Yoshinao Miura, Kawasaki, JP;
Hironobu Miyamoto, Kawasaki, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode.