The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Feb. 18, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/522 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/02074 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/3105 (2013.01); H01L 21/31144 (2013.01); H01L 21/321 (2013.01); H01L 21/768 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76808 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76859 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes an interlayer insulating film INS, adjacent Cu wirings MW formed in the interlayer insulating film INS, and an insulating barrier film BRwhich is in contact with a surface of the interlayer insulating film INSand surfaces of the Cu wirings MW and covers the interlayer insulating film INSand the Cu wirings MW. Between the adjacent Cu wirings MW, the interlayer insulating film INShas a damage layer DMon its surface, and has an electric field relaxation layer ERhaving a higher nitrogen concentration than a nitrogen concentration of the damage layer DMat a position deeper than the damage layer DM