The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Aug. 17, 2015
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 43/12 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/4853 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract
Provided is a memory device including a plurality of first conductive line layers, a plurality of support structures, and a charge storage layer. Each of the first conductive line layers extends along a plane defined by a first direction and a second direction. Each of the first conductive line layers includes a plurality of first conductive lines extending along the first direction. The support structures are located between the adjacent first conductive line layers. The charge storage layer covers upper surfaces, lower surfaces, and two side surfaces of the first conductive lines and surfaces of the support structures.