The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Dec. 28, 2012
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventor:
Kunaljeet Tanwar, Slingerlands, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); H01L 21/32134 (2013.01); H01L 21/7684 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01);
Abstract
Embodiments described herein provide approaches for interconnect formation in a semiconductor device. Specifically, a Cu layer is removed to a top surface of an Ru layer using CMP, the Cu layer is removed to form a recess within each of a plurality of trenches of a dielectric of the semiconductor device, and the Ru layer is removed using an etch process (e.g., a wet etch). An additional CMP is performed to reach the desired target trench height and to planarize the wafer.