The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Sep. 14, 2015
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Man Lung Mui, Fremont, CA (US);

Jongmin Park, Cupertino, CA (US);

Hao Thai Nguyen, San Jose, CA (US);

Seungpil Lee, San Ramon, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/28 (2006.01); G11C 7/06 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/067 (2013.01); G11C 11/5642 (2013.01); G11C 16/3436 (2013.01); G11C 16/28 (2013.01);
Abstract

A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp circuit is connected to first and second supply levels, a first level used for setting a program inhibit level on bit lines and a second level used for pre-charging bit lines for sensing operation. Outside of a data latch, the sense amp can employ only NMOS transistors. The arrangement of the circuit also allows for the discharging the bit line at the same time as transfers the sensing result out to other latches.


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