The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Feb. 07, 2014
Applicant:
Materials Analysis Technology Inc, Hsinchu, TW;
Inventor:
Sajal Biring, Hsinchu, TW;
Assignee:
MATERIALS ANALYSIS TECHNOLOGY INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06T 7/60 (2006.01); G06T 7/00 (2006.01);
U.S. Cl.
CPC ...
G06T 7/602 (2013.01); G06T 7/0083 (2013.01); G06T 2207/10056 (2013.01); G06T 2207/20136 (2013.01); G06T 2207/30148 (2013.01);
Abstract
An automatic calculation method for thickness calculation of a deposition layer in a Fin-type field-effect transistor (FinFET) is disclosed through mapping edge lines onto an Excel spreadsheet. The similar method is also applied to the thickness calculation of superlattice or multiple quantum well for a light emitting diode (LED). The edge lines are obtained and transformed from an electronic image taken by Transmission Electron Microscopy (TEM), Focus Ion Beam (FIB), Atomic Force Microscopy (AFM), or X-Ray Diffraction (XRD) of the device.