The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Apr. 30, 2015
Ji-myung Kim, Hwaseong-si, KR;
Yong-chul Kim, Daejoen, KR;
Young-sik Park, Seoul, KR;
Kwang-sub Yoon, Yongin-si, KR;
Ji-myung Kim, Hwaseong-si, KR;
Yong-chul Kim, Daejoen, KR;
Young-sik Park, Seoul, KR;
Kwang-sub Yoon, Yongin-si, KR;
Abstract
A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of ±n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the ±n-order diffracted light beams, defocus experienced by the feature pattern.