The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 27, 2011
Wataru Iwaya, Tokyo, JP;
Takeshi Kondo, Tokyo, JP;
Wataru Iwaya, Tokyo, JP;
Takeshi Kondo, Tokyo, JP;
LINTEC CORPORATION, Tokyo, JP;
Abstract
The invention is a formed article including a gas barrier layer, the gas barrier layer including a surface layer part that is formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, the surface layer part having a carbon atom content rate of more than 0 and not more than 70%, an oxygen atom content rate of 10 to 70%, a nitrogen atom content rate of 0 to 35%, and a silicon atom content rate of 20 to 55%, based on a total content rate of carbon atoms, oxygen atoms, nitrogen atoms, and silicon atoms; a method for producing the formed article; an electronic device member including the formed article; and an electronic device comprising the electronic device member. The formed article of the invention exhibits an excellent gas barrier capability, excellent transparency, and excellent bending resistance. The method for producing a formed article of the invention can efficiently, safely, and conveniently produce the formed article of the invention. The electronic device member of the invention may suitably be used for electronic devices such as displays and solar cells.