The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
May. 05, 2015
Applicant:
Everspin Technologies, Inc., Chandler, AZ (US);
Inventors:
Kerry Joseph Nagel, Scottsdale, AZ (US);
Kenneth Smith, Chandler, AZ (US);
Moazzem Hossain, Laveen, AZ (US);
Sanjeev Aggarwal, Scottsdale, AZ (US);
Assignee:
Everspin Technologies, Inc., Chandler, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/28568 (2013.01); H01L 21/32133 (2013.01); H01L 21/76877 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract
A conductive via disposed beneath a magnetic device and aligned therewith. In certain embodiments, an electrode formed on the conductive via may be polished to eliminate step functions or seams originating at the conductive via from propagating up through the various deposited layers. This integration approach allows for improved scaling of the MRAM devices to, for example, a 45 nanometer node.