The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jan. 19, 2012
Applicant:
Jianhua Liu, Shanghai, CN;
Inventor:
Jianhua Liu, Shanghai, CN;
Assignee:
ADVANCED SEMICONDUCTOR MANUFACTURING CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 27/11546 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01); H01L 21/8249 (2013.01);
Abstract
The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD process comprises a selection transistor and a storage transistor connected in series, wherein the selection transistor is an LDNMOS transistor. The present invention may embed the procedure for forming the EEPROM core structure into the BCD process, which is favorable to reduce the complexity of the process.