The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Dec. 11, 2014
Weize Chen, Phoenix, AZ (US);
Richard J. DE Souza, Chandler, AZ (US);
Mazhar Ul Hoque, Gilbert, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
Weize Chen, Phoenix, AZ (US);
Richard J. De Souza, Chandler, AZ (US);
Mazhar Ul Hoque, Gilbert, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.