The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jun. 18, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Badih El-Kareh, Cedar Park, TX (US);
Leonard Forbes, Corvallis, OR (US);
Kie Y. Ahn, Chappaqua, NY (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/732 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/73 (2006.01); H03K 17/60 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 29/0817 (2013.01); H01L 29/1004 (2013.01); H01L 29/66272 (2013.01); H01L 29/66287 (2013.01); H01L 29/73 (2013.01); H01L 29/7371 (2013.01); H03K 17/60 (2013.01);
Abstract
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor.