The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Sep. 23, 2015
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Manoj Kumar, Dhanband, IN;
Chia-Hao Lee, New Taipei, TW;
Chih-Cherng Liao, Jhudong Township, TW;
Ching-Yi Hsu, Hsinchu, TW;
Jun-Wei Chen, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure is provided, which includes a first high-voltage MOS device region having a first well and a first light-doping region in a part of the first well, wherein the conductive type of the first well and the conductive type of the first light-doping region are opposite. The first high-voltage MOS device region also includes a first gate stack on a part of the first well and a part of the first light-doping region, and first heavy-doping regions in the first well and the first light-doping region at two sides of the gate stack, wherein the conductive type of the first heavy-doping region and the conductive type of the first well are the same. The first light-doping region between the first well and the first heavy-doping regions is a channel region of the first high-voltage MOS device region.