The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Oct. 26, 2015
Applicant:
Asia Pacific Microsystems, Inc., Hsinchu, TW;
Inventor:
Hung-Lin Yin, Hsinchu, TW;
Assignee:
ASIA PACIFIC MICROSYSTEMS, INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/283 (2006.01); H01L 21/762 (2006.01); B06B 1/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); B06B 1/0292 (2013.01); H01L 21/283 (2013.01); H01L 21/76251 (2013.01); H01L 24/84 (2013.01); H01L 21/306 (2013.01); H01L 21/762 (2013.01); H01L 23/00 (2013.01);
Abstract
The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads. The reinforcing elements strengthen the integration of the upper electrodes and the insulation layer.