The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
May. 21, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 23/525 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/84 (2013.01); H01L 27/12 (2013.01);
Abstract
A method of forming a semiconductor device comprising a fuse is provided including providing a semiconductor-on-insulator (SOI) structure comprising an insulating layer and a semiconductor layer formed on the insulating layer, forming raised semiconductor regions on the semiconductor layer adjacent to a central portion of the semiconductor layer and performing a silicidation process of the central portion of the semiconductor layer and the raised semiconductor regions to form a silicided semiconductor layer and silicided raised semiconductor regions.