The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Apr. 29, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Gyeong-seop Kim, Suwon-si, KR;

Sungbong Kim, Suwon-si, KR;

Myeongcheol Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/30 (2006.01); H01L 21/82 (2006.01); H01L 21/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 29/6656 (2013.01);
Abstract

A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.


Find Patent Forward Citations

Loading…