The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Apr. 15, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
MICRON TECHNOLOGY, INC., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02631 (2013.01); C23C 14/0021 (2013.01); C23C 14/0623 (2013.01); C23C 14/3407 (2013.01); C23C 14/3492 (2013.01); C23C 14/548 (2013.01); H01L 21/02266 (2013.01); Y10S 428/938 (2013.01); Y10T 428/12896 (2015.01);
Abstract
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.