The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Feb. 25, 2014
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

John M. Pigott, Phoenix, AZ (US);

Randall C. Gray, Tempe, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/06 (2006.01); H01L 23/525 (2006.01); G11C 17/16 (2006.01); H01L 27/112 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/06 (2013.01); H01L 23/5252 (2013.01); H01L 27/11206 (2013.01); G11C 17/18 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The embodiments described herein provide antifuse devices and methods that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes an antifuse, a first diode coupled with the antifuse in a parallel combination, and a second diode coupled in series with the parallel combination. In such an embodiment the first diode effectively provides a bypass current path that can reduce the voltage across the antifuse when other antifuses are being programmed. As such, these embodiments can provide improved ability to tolerate programming voltages without damage or impairment of reliability.


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