The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Feb. 16, 2012
Andrew N. Erickson, Santa Barbara, CA (US);
Andrew N. Erickson, Santa Barbara, CA (US);
DCG SYSTEMS, INC., Fremont, CA (US);
Abstract
Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.