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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9550322 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Apr. 10, 2015

Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Naomi Shida, Tokyo, JP;

Kenji Todori, Yokohama, JP;

Shigehiko Mori, Kawasaki, JP;

Ko Yamada, Yokohama, JP;

Masakazu Yamagiwa, Tokyo, JP;

Reiko Yoshimura, Kawasaki, JP;

Yasuyuki Hotta, Tokyo, JP;

Tsukasa Tada, Tokyo, JP;

Hiroyuki Kashiwagi, Fujisawa, JP;

Ikuo Yoneda, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Stephen Rosasco

Int. Cl.
CPC ...
G03F 7/24 (2006.01); G03F 7/20 (2006.01); G03F 1/50 (2012.01); B29C 59/16 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); B29D 11/00 (2006.01); G03F 7/00 (2006.01); B29L 11/00 (2006.01);
U.S. Cl.
CPC ...
B29C 59/16 (2013.01); B29D 11/0074 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/70325 (2013.01); B29L 2011/00 (2013.01); G03F 1/50 (2013.01); G03F 7/0002 (2013.01);
Abstract

A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

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