Fixed abrasive-grain processing device, method of fixed abrasive-grain processing, and method for producing semiconductor wafer

Abstract

Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members.