The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Oct. 31, 2012
Applicants:

Thierry Sicard, Auzeville Tolosane, FR;

Philippe Perruchoud, Tournefeuille, FR;

Inventors:

Thierry Sicard, Auzeville Tolosane, FR;

Philippe Perruchoud, Tournefeuille, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/60 (2006.01); H03K 17/567 (2006.01); H02M 1/08 (2006.01); H02M 7/538 (2007.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H02M 1/08 (2013.01); H02M 7/538 (2013.01); H03K 17/0828 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A self-powered gate drive circuit comprising a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on.


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