The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Oct. 28, 2015
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Jae-Hoon Choi, Seoul, KR;
Buem Yeon Lee, Seoul, KR;
Ki Young Song, Seoul, KR;
Rak Jun Choi, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/387 (2013.01); B82Y 20/00 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02444 (2013.01); H01L 21/02472 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 33/42 (2013.01); Y10S 977/734 (2013.01); Y10S 977/95 (2013.01);
Abstract
Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer.