The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Sep. 01, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Shigeki Hattori, Kawasaki, JP;
Tsukasa Tada, Hachioji, JP;
Masaya Terai, Kawasaki, JP;
Hideyuki Nishizawa, Toshima, JP;
Koji Asakawa, Kawasaki, JP;
Yoshiaki Fukuzumi, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); G11C 11/56 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); G11C 11/5664 (2013.01); H01L 27/285 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 51/0091 (2013.01); H01L 51/0591 (2013.01);
Abstract
A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).