The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Apr. 23, 2014
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Jingyan Huang, Singapore, SG;

Chuan Wang, Singapore, SG;

Chim Seng Seet, Singapore, SG;

Yun Ling Tan, Singapore, SG;

Alex See, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/49 (2013.01); H01L 21/28273 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 27/11521 (2013.01); H01L 29/42328 (2013.01); H01L 29/665 (2013.01); H01L 29/66825 (2013.01); H01L 29/456 (2013.01);
Abstract

Integrated circuits having nickel silicide contacts and methods for fabricating integrated circuits with nickel silicide contacts are provided. An exemplary method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a nonvolatile memory structure over the semiconductor substrate. The nonvolatile memory structure includes a gate surface. The method further includes depositing a nickel-containing material over the gate surface. Also, the method includes annealing the nonvolatile memory structure and forming a nickel silicide contact on the gate surface from the nickel-containing material.


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