The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Dec. 07, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jam-Wem Lee, Hsin-Chu, TW;

Tsung-Che Tsai, Hsin-Chu, TW;

Yi-Feng Chang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 29/0649 (2013.01); H01L 29/4975 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract

An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions have a first portion and a second portion, with the first portion and the second portion on opposite sides of the semiconductor fin. The semiconductor fin has a first height. The integrated circuit device further includes a gate stack over a middle portion of the semiconductor fin, and a fin spacer on a sidewall of an end portion of the semiconductor fin. The fin spacer has a second height. The first height is greater than about two times the second height.


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