The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Dec. 24, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventor:
Feng-Nien Tsai, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01); H01L 27/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G03F 1/36 (2013.01); H01L 21/0274 (2013.01);
Abstract
Provided is a semiconductor structure. The semiconductor structure is formed on a substrate, and includes a first region and a second region surrounded by the first region. The first region has a first pattern density, and the second region has a second pattern density. The first pattern density is smaller than the second pattern density. The second region includes a central region and a boundary region. The central region has a first critical dimension, and the boundary region has a second critical dimension. Variation between the first critical dimension and the second critical dimension is smaller than 6.5%.