The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Apr. 27, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Chi-Min Yuan, Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 9/455 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G06F 17/5072 (2013.01);
Abstract
A method for configuring a via in a semiconductor device includes determining time dependent dielectric breakdown failure rate as a function of distance between the via and a metal line, generating candidate via configurations with different sizes, rotation, and offset values for the via, determining TDDB failure rate for the candidate via configurations, and selecting one of the candidate via configurations with an optimal TDDB failure rate for the via.