The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Aug. 14, 2015
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Jia Jie Xia, Singapore, SG;
Nagarajan Ranganathan, Singapore, SG;
Rakesh Kumar, Singapore, SG;
Aveek Nath Chatterjee, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/00246 (2013.01); B81B 2207/015 (2013.01); B81B 2207/07 (2013.01); B81C 2201/013 (2013.01); B81C 2201/019 (2013.01); B81C 2201/053 (2013.01); B81C 2203/0735 (2013.01);
Abstract
Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.