logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9543500 B1

PDFFull Text
Date of Patent:
Jan. 10, 2017

Filed:

Oct. 04, 2011

Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof

Applicants:

Minoru Osada, Ibaraki, JP;

Takayoshi Sasaki, Ibaraki, JP;

Inventors:

Minoru Osada, Ibaraki, JP;

Takayoshi Sasaki, Ibaraki, JP;

Assignee:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

David Sample

Assistant Examiner:

Nicole T Gugliotta

Int. Cl.
CPC ...
B32B 7/02 (2006.01); B32B 27/32 (2006.01); H01L 29/04 (2006.01); H01L 41/18 (2006.01); G11C 11/22 (2006.01); H01L 21/02 (2006.01); H01L 27/115 (2006.01); C30B 19/06 (2006.01); H01G 4/12 (2006.01); H01L 41/187 (2006.01); H01G 4/33 (2006.01); H01L 41/317 (2013.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 41/183 (2013.01); C30B 19/062 (2013.01); G11C 11/22 (2013.01); H01G 4/12 (2013.01); H01G 4/33 (2013.01); H01L 21/02197 (2013.01); H01L 27/11507 (2013.01); H01L 41/1871 (2013.01); H01L 41/1873 (2013.01); H01L 41/1876 (2013.01); H01L 41/1878 (2013.01); H01L 41/317 (2013.01); H01L 28/55 (2013.01); Y10T 428/24975 (2015.01);
Abstract

At least two types of dielectric materials such as oxide nanosheets having a layered perovskite structure that differ from each other are laminated, and the nanosheets are bonded to each other via an ionic material, thereby producing a superlattice structure-having ferroelectric thin film. Having the layered structure, the film can exhibit ferroelectricity as a whole, though not using a ferroelectric material therein. Accordingly, there is provided a ferroelectric film based on a novel principle, which is favorable for ferroelectric memories and others and which is free from a size effect even though extremely thinned.

Find Patent Forward Citations

Loading…