The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Mar. 09, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Mitsuyoshi Endo, Yamato, JP;

Shuji Itonaga, Yokohama, JP;

Miyuki Shimojuku, Kawasaki, JP;

Yukihiro Nomura, Fuchu, JP;

Hideto Furuyama, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/54 (2010.01); H01L 33/46 (2010.01); H01L 33/02 (2010.01); H01L 33/62 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/54 (2013.01); H01L 33/0012 (2013.01); H01L 33/02 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); H01L 33/62 (2013.01);
Abstract

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.


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