The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jul. 01, 2015
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Wing-Chor Chan, Hsinchu, TW;
Hsing-Chih Wu, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/808 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/063 (2013.01); H01L 29/0634 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/66893 (2013.01); H01L 29/66901 (2013.01); H01L 29/7832 (2013.01);
Abstract
Provided is a semiconductor device, including: a substrate, a well region of a first conductivity type, a field region of a second conductivity type, a first doped region of the first conductivity type, and a second doped region of the second conductivity type. The well region is located in the substrate. The field region is located in the well region. The first doped region is located in the well region of a first side of the field region. The second doped region is located in the field region, wherein the first doped region is at least partially surrounded by the second doped region.