The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 28, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Holger Ruething, Munich, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Frank Hille, Munich, DE;
Frank Pfirsch, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 29/32 (2013.01); H01L 29/7397 (2013.01); H01L 27/0611 (2013.01); H01L 29/167 (2013.01);
Abstract
A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies.