The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Dec. 11, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/96 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/04 (2013.01); H01L 29/423 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/42368 (2013.01); H01L 29/7396 (2013.01);
Abstract
A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the semiconductor body. A control structure electrically connects a recombination region to the drift zone during a desaturation cycle and disconnects the recombination region from the drift zone outside the desaturation cycle. During the desaturation cycle the recombination region reduces a charge carrier plasma in the drift zone and reduces reverse recovery losses without adversely affecting blocking characteristics.