The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Jun. 30, 2015
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazunori Inoue, Kumamoto, JP;

Koji Oda, Kumamoto, JP;

Naoki Tsumura, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/441 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); H01L 21/441 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 2001/134372 (2013.01); G02F 2001/136231 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract

A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.


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