The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Aug. 05, 2015
Qualcomm Incorporated, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Niladri Narayan Mojumder, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.