The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Dec. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/50 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4827 (2013.01); H01L 21/3105 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/50 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.