The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Feb. 19, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kunsang Park, Hwaseong-si, KR;
Sukyoung Kim, Suwon-si, KR;
Jisoon Park, Suwon-si, KR;
Ju-Il Choi, Suwon-si, KR;
Byung Lyul Park, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Abstract
Methods for fabricating semiconductor devices having through electrodes are provided. The method may comprise forming a via hole which opens towards an upper surface of a substrate and disconnects with a lower surface of the substrate; forming a via isolation layer which extends along an inner surface of the via hole and covers the upper surface of the substrate; forming a seed layer on the via isolation layer which extends along the via isolation layer; annealing the seed layer in-situ after forming the seed layer; forming a conductive layer, filling the via hole, by an electroplating using the seed layer; and planarizing the upper surface of the substrate to form a through electrode surrounded by the via isolation layer in the via hole.