The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jun. 10, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Yunsang Kim, Monte Sereno, CA (US);
YounGi Hong, Pleasanton, CA (US);
Ivan Berry, San Jose, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/225 (2006.01); H01L 21/30 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2256 (2013.01); H01L 21/02041 (2013.01); H01L 21/2658 (2013.01); H01L 21/3003 (2013.01); H01L 21/324 (2013.01);
Abstract
A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer.