The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Jan. 21, 2014
Applicant:

Bruker Axs Gmbh, Karlsruhe, DE;

Inventor:

Assunta Vigliante, Stuttgart, DE;

Assignee:

Bruker AXS GmbH, Karlsruhe, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/223 (2006.01); G01N 21/95 (2006.01); G01N 23/20 (2006.01);
U.S. Cl.
CPC ...
G01N 23/223 (2013.01); G01N 21/9501 (2013.01); G01N 21/9503 (2013.01); G01N 23/20025 (2013.01); G01N 2223/076 (2013.01); G01N 2223/6116 (2013.01); G01N 2223/652 (2013.01);
Abstract

An XRF (XRF=x-ray fluorescence) measurement apparatus () has an x-ray source () for generating x-rays (), x-ray optics () for directing x-rays () from the x-ray source () to a sample () and an EDS (EDS=energy dispersive spectroscopy) detector () for detecting fluorescent x-rays () from the sample (). The apparatus is characterized in that the sample () is a wafer (), in particular a Si wafer, wherein the x-ray optics () is positioned to direct the x-rays () onto the bevel () of the wafer (). The x-ray source () plus the x-ray optics () has a brilliance of at least 5*10counts/sec mm, preferably at least 1*10counts/sec mm. The apparatus allows an improved contamination control of wafers, in particular silicon wafers.


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