The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Apr. 14, 2016
Applicant:
Semileds Optoelectronics Co., Ltd., Chu-Nan, TW;
Inventor:
Yi-Feng Shih, Chu-Nan, TW;
Assignee:
SemiLEDS Optoelectronics Co., Ltd., Chu-Nan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 33/06 (2010.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/60 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.