The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jun. 02, 2009
Jiunn Benjamin Heng, Redwood City, CA (US);
Chentao Yu, Sunnyvale, CA (US);
Zheng Xu, Pleasanton, CA (US);
Jianming Fu, Palo Alto, CA (US);
Peijun Ding, Saratoga, CA (US);
Jiunn Benjamin Heng, Redwood City, CA (US);
Chentao Yu, Sunnyvale, CA (US);
Zheng Xu, Pleasanton, CA (US);
Jianming Fu, Palo Alto, CA (US);
Peijun Ding, Saratoga, CA (US);
SolarCity Corporation, San Mateo, CA (US);
Abstract
One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.